Via inductance is what dulls your decoupling

Placing 0.1uF at an IC's power pin does not place a capacitor. It places "a capacitor with a small inductor attached." More than half of that inductance comes not from the capacitor but from the via and the trace feeding it.

Last updated: 2026-10-28 DecouplingViasInductancePower delivery

A capacitor turns into an inductor above some frequency

Every real capacitor has a series inductance, ESL, from its electrodes and terminations. Above the series resonance of C and ESL, f = 1 / (2π√(L·C)), impedance rises in proportion to frequency and the part stops behaving as a capacitor. ESL is 0.5–0.7nH for a 1608 (0603) MLCC and about 0.4–0.5nH for a 1005 (0402).

For 0.1uF with 0.5nH of ESL, resonance sits at 22MHz and above that it is a 0.5nH inductor. Its impedance at 100MHz is 2π × 100M × 0.5n = 0.31Ω. On a real board, the trace and via from the pad to the IC's power pin add to this.

The loop formed by a capacitor connection and its vias
The loop formed by a capacitor connection and its vias. AI-generated conceptual illustration; see the article’s diagrams and text for circuit details and conditions.
Impedance of 0.1uF versus frequency, for 0.5nH and 2.0nH of inductanceLog-log graph of |Z| from 1MHz to 1GHz. 0.5nH resonates at 22MHz and gives 0.31Ω at 100MHz; 2.0nH resonates at 11MHz and gives 1.3Ω at 100MHz. Above resonance, L sets the impedance. Above resonance, inductance sets the impedance 0.1uF in series with L. Ideal curves, ESR ignored 1MHz 10MHz 100MHz 1GHz 0.01Ω 0.1Ω 1Ω 10Ω |Z| 0.31Ω 1.3Ω 0.5nH (ESL only) 2.0nH (via 2mm from the pad) 11MHz 22MHz
Figure 1: impedance of 0.1uF. Above resonance L sets it, and a larger L lowers the resonance.

Inductance added by the trace and the via

Via inductance is approximated by L ≈ 5.08·h·[ln(4h/d) + 1] for length h and hole diameter d (inches; L in nH). A 0.3mm via through a 1.6mm board is about 1.2nH, but current only flows from the pad to the reference plane. With the plane on layer 2 (0.2mm below the top), the effective length is short and the contribution is about 0.1–0.2nH.

The trace is the bigger problem. A short lead-out from pad to via on a thin trace over a plane carries roughly 0.5–1nH/mm. Keep the via 2mm from the pad and that adds 1–2nH, 2 to 4 times the ESL. An ordinary 0.1uF 1608 totals 1.5–3nH: resonance falls to 11MHz at 2nH and the impedance at 100MHz rises to 1.3Ω.

Total inductance for 0.1uF (1608), and the resulting resonant frequency and impedance at 100MHz
LayoutTotal LResonance|Z| @100MHz
Capacitor alone (ESL only)0.5nH22MHz0.31Ω
Via right at pad, plane on layer 20.8nH18MHz0.50Ω
Via 2mm from pad2.0nH11MHz1.3Ω
Same, but two vias on one side1.3nH14MHz0.8Ω
Decoupling capacitor current loop and its inductance breakdownSchematic board cross-section. Left: via placed 2mm from the pad, giving a large loop and 2nH total. Right: via placed right at the pad, giving 0.8nH total. More than half the inductance comes from trace and via, not the capacitor Approximate figures for 0.1uF 1608 with the GND plane on layer 2 (0.2mm down) Via 2mm from the pad GND / power plane 0.1µF Capacitor ESL: 0.5nH 2mm lead x 2: about 1.3nH Via 0.2mm x 2: about 0.2nH Total approx. 2.0nH -> 11MHz resonance, 1.3Ω at 100MHz A bigger loop means more inductance Via right at the pad GND / power plane 0.1µF Capacitor ESL: 0.5nH Near-zero lead: about 0.1nH Via 0.2mm x 2: about 0.2nH Total approx. 0.8nH -> 18MHz resonance, 0.5Ω at 100MHz Layout alone can recover over 1nH
Figure 2: the decoupling current loop. The lead-out from pad to via adds more inductance than the capacitor's ESL.

Layout choices that recover 1nH

Improving decoupling means cutting inductance, not adding capacitance. Ranked by impact:

Put the via right against the pad. Shrinking the trace between pad and via toward zero helps most. Via-in-pad needs resin fill or a small via. Tucking the via beside the pad saves over 1nH versus 2mm away.

Bring both power-side and GND-side vias in close. Current flows in a loop, so a distant GND via defeats the rest.

Use two vias. Mutual inductance keeps the reduction at 60–70%, not half. In the table, 2.0nH becomes 1.3nH.

Put the reference plane close to the top layer. With layer 2 as GND on a 4-layer board, the via is only 0.2mm long.

Place the capacitor under the IC, on the back side. With no room on top, only the board-thickness via (1.6mm) is in the path, shorter than a 5mm run on the top layer.

The old rule of paralleling a 0.1uF with a 0.01uF for wide bandwidth creates an anti-resonance (an impedance peak) between the two resonances. Paralleling several capacitors of the same value and size lowers impedance without that peak.

Plane-to-plane capacitance, and the frequency where capacitors stop mattering

A power plane next to a GND plane forms distributed capacitance. In FR-4 (εr ≈ 4.3), a 0.1mm gap gives about 38pF/cm² and 0.2mm gives 19pF/cm². 10cm × 10cm at 0.1mm is 3.8nF, small, but with no via and no trace, its inductance is essentially zero.

Above a few hundred MHz, plane capacitance and the capacitors inside the package and die take over; decoupling capacitors cover a few MHz up to the low hundreds of MHz.

Hence many 0.1uF capacitors, each placed tightly. Ten in parallel turn each 2nH into an effective 0.2nH, bringing 100MHz impedance down to 0.13Ω. Ten 0.1uF beat a single 1uF at high frequency.

One 0.1uF versus ten in parallelLeft: one 0.1uF with 2nH of inductance, 1.3Ω at 100MHz. Right: ten of the same in parallel, acting like 0.2nH, 0.13Ω at 100MHz. One 0.1uF 2nH 0.1µF Supply Total 2nH 1.3Ω at 100MHz Ten 0.1uF in parallel 2nH 0.1µF ⋮ Supply × 10 Ten 2nH in parallel = 0.2nH 0.13Ω at 100MHz Ten 0.1uF beat a single 1uF at high frequency.
Figure 3: the same 2nH, ten in parallel, acts like 0.2nH. At 100MHz, 1.3Ω becomes 0.13Ω.

Checking it on real hardware

The reliable check is to measure power-to-GND impedance with a network analyzer. A two-port shunt sweep from 100kHz to 1GHz shows the resonances, anti-resonances and which capacitor works where.

Without one, read ripple at the power pin with a ground spring (the probe's short GND tip). A GND lead a few cm long adds its own inductance, so you cannot tell the capacitor layout from the probe's.

Frequently asked questions

Would 1uF or 10uF work better than 0.1uF?
For the same package, ESL is the same, so impedance above tens of MHz barely changes. More capacitance only helps below resonance. For high frequency, cut inductance: tighten the layout or add capacitors in parallel.
How many vias should each capacitor get?
One each on the power and GND side, right against the pad, is the baseline; use two each if that is not enough. Two do not halve the inductance (60–70%), so shorten the trace between pad and via first.
How close, in mm, should the capacitor be to the IC's pin?
What matters is the inductance of the capacitor-via-plane path. If the IC's power pin also drops to the plane through a via, a capacitor with the shortest path to the plane works even 5mm away. Joined by a thin top-layer trace that never reaches the plane, even 1mm adds trace inductance.
How much can I trust the via-inductance formula?
A rough figure for an isolated via; a nearby GND via shrinks the loop and brings the real value lower. Use it to compare layouts.

Standards and references

  • H. W. Johnson, M. Graham, High-Speed Digital Design — Via inductance approximation and decoupling loop inductance
  • MLCC manufacturers' ESL and impedance characteristic data — ESL values and resonant frequencies by package size
  • IPC-2221B — Stack-up and power-plane design requirements

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